High Resistivity Silicon Substrate (HiRes)

Topsil Float Zone-High Resistivity Silicon Substrate(FZ-HiRes) is an excellent choice for a microwave substrate. The RF device properties obtained on high resistivity silicon are comparable to GaAs(the present popular choice).They also offer low loss, high performance and low cost for the overall system.


Typical devices that will benefit from using Topsil Float Zone-High Resistivity Silicon Substrate (FZ- HiRes) silicon are:
GHz & THz applications(Transmitter,mixerand receiver circuits),RF MEMS switches,High-Q inductors and capacitors, Low loss microstrip transmission lines and coplanar waveguides, Millimeter-wave attenuators and many more

Technical Specifications