Gallium Nitride(GaN) silicon wafer

Topsil Float zone for Gallium Nitride(GaN) silicon wafers are thin film growth based. These wafers meet various parameters such as-Crystal perfectness, Accurate crystallographic orientation Predictable bending behavior (BOW), High quality surface for EPI, Perfect edge conditions and Accurate chemical control.The wafers are available in a dia of 100 and 150mm respectively


Topsil Gallium Nitride(GaN) silicon wafers are suitable for a wide variety of microelectronic devices, such as LED applications, RF communications and power electronics. The wafers require no wafer conditioning prior to film growth.


Technical Specifications