Most power electronics devices are manufactured using float zone wafers for its high purity, resistivity, life time. Wafers are avaliable from 4" to 8" in dia in both p and n types.
Topsil Float zone for Gallium Nitride(GaN) silicon wafers are thin film growth based.
Topsil Micro-Electro-Mechanical Systems(MEMS)silicon wafers are characterised by large flexibility in terms of bulk properties and wafering
Due to its high purity, it has unique transmission performance across most of the infrared band, including the far infrared region