PHOTORESISTS - E-BEAM RESISTS - ma-N 2400 | Materials


ma-N 2400

  • Negative photoresist series well suited for e-beam and deep UV exposure in the manufacturing of semiconductor devices.
  • Aqueous alkaline development
  • High resolution capability (~ 40 – 50 nm)
  • High wet and dry etch resistance
  • Easy to remove

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