Offer a wide range of materials right from silicon wafers, various substrates, chemicals, packages, etc.
Topsil Float zone for Gallium Nitride(GaN) silicon wafers are thin film growth based.
Topsil Micro-Electro-Mechanical Systems(MEMS)silicon wafers are characterised by large flexibility in terms of bulk properties and wafering
Due to its high purity, it has unique transmission performance across most of the infrared band, including the far infrared region
Topsil Float Zone-High Resistivity Silicon Substrate(FZ-HiRes) is an excellent choice for a microwave substrate
The Float Zone-High Purity Monocrystalline Silicon wafer (FZ-HPS) silicon wafers are available as p- and n-type silicon and in dia up to 200mm.
Float Zone-Uniform Float Zone based High Purity Silicon substrate (FZ-UHPS) have charecteristics such as-Optimised resistivity variation,
Photo Voltaic Float Zone(PV-FZ) silicon wafers have High minority carrier bulk lifetime
Most power electronics devices are manufactured using float zone wafers for its high purity, resistivity, life time
Float Zone-Preferred Float Zone(FZ-PFZ) silicon wafer has the lowest resistivity variations of the in-situ doped float zone products available.
