Equipments - Wafer Bonding - Aligner Wafer Bonder AWB-04 & AWB-08 |

Aligner Wafer Bonder AWB-04/AWB-08

  • Insitu alignment at temperature, immediately prior to bonding: post-bond accuracy 1µm
  • Bonding temperatures up to 560°C, with wafers able to be held at different temperatures
  • Contact force up to 40kN
  • Operation under controlled atmospheres: 106mbar vacuum to 2 bar absolute, using process gas (and UHV option)
  • Anodic bonding voltage up to 2.5kV
  • Insitu surface chemistry: for example, oxide removal in Cu-Cu bonding, or activation of the bonding surfaces

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